用于duv光刻掩膜优化算法的模型，包含部分相干光照明，光刻胶分层模型，具体考虑了瞳孔放大系数，以及电磁波的畸变等因素。(The model for DUV photolithography optimization algorithm, including partially coherent light illumination and photoresist stratification model, takes into account the factor of pupil magnif