文件名称:datasheet_5
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IGBTs were first introduced as a combination of the bipolar junction transistor
(BJT) and the metal oxide semiconductor field effect transistor (MOSFET)
technology. The IGBT is to prefer in medium high voltage segments (600-
3000V) rather than theMOSFET because it proved to have several good features
like ruggedness and operation at higher frequencies [1, ch. 1.9]. The construction
of the IGBT combines the low conduction losses of a BJT with the advantage
of the short switching times of the MOSFET.相关搜索： datasheet
5
datasheet5
(BJT) and the metal oxide semiconductor field effect transistor (MOSFET)
technology. The IGBT is to prefer in medium high voltage segments (600-
3000V) rather than theMOSFET because it proved to have several good features
like ruggedness and operation at higher frequencies [1, ch. 1.9]. The construction
of the IGBT combines the low conduction losses of a BJT with the advantage
of the short switching times of the MOSFET.相关搜索： datasheet
5
datasheet5
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datasheet_5.pdf