文件名称:00554481

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  • 行业发展研究
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  • 2016-03-15
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he fabrication and performaince of a semiconductor

optical amplifier for wavelength conversion in subcarrier

multiplexed system is described. The amplifier is of the buried

facet design and has p o ~ a r ~ ~ a ~anido nre flectivity gain ripple of

carrier multiplexing, multiple 50-Mb/s

data streams at a wave~ength of 1.553 pm are injected into the

amplifier. The gain y of the amplifier transfers the

data to a dierent w of light siniultaneously injected

into the amplifier. Error free retri of subcarrier multiplexed

data has been de~ons~ratefodr the wavelength converted output.

The small signal bandwidth of the wavelength conversion process

is 5 GHz.-he fabrication and performaince of a semiconductor

optical amplifier for wavelength conversion in subcarrier

multiplexed system is described. The amplifier is of the buried

facet design and has p o ~ a r ~ ~ a ~anido nre flectivity gain ripple of

carrier multiplexing, multiple 50-Mb/s

data streams at a wave~ength of 1.553 pm are injected into the

amplifier. The gain y of the amplifier transfers the

data to a dierent w of light siniultaneously injected

into the amplifier. Error free retri of subcarrier multiplexed

data has been de~ons~ratefodr the wavelength converted output.

The small signal bandwidth of the wavelength conversion process

is 5 GHz.
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