文件名称:06842614
- 所属分类：
- 文档资料
- 资源属性：
- [PDF]
- 上传时间：
- 2014-09-09
- 文件大小：
- 906kb
- 下载次数：
- 0次
- 提 供 者：
- muthu*****
- 相关连接：
- 无
- 下载说明：
- 别用迅雷下载，失败请重下，重下不扣分！
介绍说明－－下载内容均来自于网络，请自行研究使用
This asset originates from the tunneling injection being free
of the subthreshold slope limit that fundamentally blocks the
MOSFET [3]. Moreover, the limit of low ION in TFETs is
wearing off, as drive currents around 100 ìA/ìm have been
reported recently [4]–[8]. Despite a large interest in TFET performance,
little investigation has been done so far on the drain
voltage dependence of their electrical characteristics [9]–[12],
[18]. The main difference reported between the output ID(VD)
characteristics is the presence of superlinear regime in TFET
as opposed to ohmic regime for MOSFET [9]. The superlinear
regime, and more specifically, the onset it generates on the
output characteristics is already well understood [16], [17].
We report here for the first time an exponential dependence
of band-to-band tunneling (BtBT) current with drain voltage
on both measured and simulated TFET ID(VD) characteristics.
of the subthreshold slope limit that fundamentally blocks the
MOSFET [3]. Moreover, the limit of low ION in TFETs is
wearing off, as drive currents around 100 ìA/ìm have been
reported recently [4]–[8]. Despite a large interest in TFET performance,
little investigation has been done so far on the drain
voltage dependence of their electrical characteristics [9]–[12],
[18]. The main difference reported between the output ID(VD)
characteristics is the presence of superlinear regime in TFET
as opposed to ohmic regime for MOSFET [9]. The superlinear
regime, and more specifically, the onset it generates on the
output characteristics is already well understood [16], [17].
We report here for the first time an exponential dependence
of band-to-band tunneling (BtBT) current with drain voltage
on both measured and simulated TFET ID(VD) characteristics.
(系统自动生成,下载前可以参看下载内容)
下载文件列表
06842614.pdf